i, lj nc. 20 stern ave. springfield, new jersey 07081 u.s.a. 2n6077-2n6079, 40851 high-voltage, high-power silicon n-p-n transistor* for switching and linear applications 2n6077, 2n6078, 2n6079 and 40851 are multiple epitaxial silicon n-p-n power transistors utilizing a multiple- emitter-site structure. multiple-epitaxial construction maximizes the volt-ampere characteristic of the device and provides fast switching speeds. multiple-emitter- site design ensures uniform current flow throughout the structure, which produces a high is/d and a iar9* safe-operation area. these devices use the popular jedec to-66 package; they differ mainly in vol- tage ratings, leakage-current limits, and vc(sat) ratings. the 2n6077 is characterized for switching applications with load lines in the active region. these applications include sweep circuits and all circuits using the transistor as an active voltage clamp. type 2n6078 is characterized for switch- ing applications with the load line extend- ing into the reverse-bias region. its voltage ratings make this device useful for switch- jng regulators operating directly from a rectified 110-v or 220-v power line. the unit is rated to take surge currents up to 5 a and maintain saturation. the 2n6079 is characterized for use in inverters operating directly from a recti- fied 110-v power line. the leakage cur- rent is specified at 450 volts; therefore the device can also be used in a series bridge configuration on a 220-v line. the vebo rating of 9 volts eases requirements on the drive transformer in inverter appli- cations. storage time, an important factor in the frequency stability of an inverter, is specified in fig. 11, which shows varia- tion in storage time with variation in load current from zero to maximum (4 a). the 40851 is characterized for use in switching-regulator power supplies that operate directly from a 120-v or 240-v ac power line. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 features: ? maximum safe-area-of-operation curves ? low saturation voltages ? high voltage ratings: vcer(sus) = 300 v (2n6077) 275 v (2n6078) 375 v (2n6079) ? high dissipation rating: pj = 45 w terminal designations cbo maximum ratings, absolute-maximum values: ?collector-to-base voltage collector-to-emitter sustaining voltage: with ten even vceolsutl ? with ravtru bin (vbe) of -1.5v vcex 'eminer-to-base voltage ?collector current: 'c continuous it* 'continuous base current ib 'transistor dissipation: ?t atc?*t*nip*fatunhupto250c at an nmpvnurn ibovt zsc 'temperature range: stofigi ft operating (junction) p'n temperature (during soldering!: ?*' """tnett^ 1/32 in. (0.8 mm) from cut for 10 i m?x. . . . ?? >vpm in accorcfanct with jedec ragiitrition dtu forirat (js-6, rdf-1). 2n6077 300 275 300 300 6 7 10 4 45 2n6078 275 250 1 275 276 6 7 10 4 2nb079 375 350 375 375 9 7 10 4 46 45 dtritt linmrly to 200 c ? -66 to +200 230 40851 450 350 375 9 7 10 4 45 v v v v a a a w c c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
2n6077-2n6079, 40851 electrical characteristics, at case temperature itc> * 25c unless otherwise specified characteristic symbol 'ceo 'cev (tc = 125c> 'ebo vceo(sus). vcer(sus) (rbe = 50n> v vebo (ie = 1 ma) hfe vbe(sat) vce(sat) cobo (vcb=10v, f = 1mhz) ihfel (f = 1 mhz) 's/b (pulse duration (non repetitive) ? 1 s) es/b |rb = 50n, l=100fih) 275" 6 12 _ - - 1 0.9 0.45 - - - - - typ. - _ - _ - - - 28 1.0 1.5 0.15 0.3 - 7 - - 0.02 0.3 2.8 0.3 - max. - 0.05 0.2 1 - - _ 70 1.6 2 0.5 3 150 - - - - 0.75 5 0.75 3.9 2n6079 min. - ? - ? ssofc 375" 9 12 - - - 1 0.9 0.45 - - - - - typ. - ? _ _ - - - 28 1.0 1.3 0.15 0.5 - 7 - - 0.02 0.3 2.8 0.3 - max. - 0.5 5 1 - - - 50 1.6 2 0.5 3 150 - - - - 0.75 5 0.75 3.9 40851 min. - _ ? ? 350" 375b 9 12 - - - - 0.9 0.45 - - - - - max. - 0.5 5 _ - - - - 2 3 - - - - _ - - - - units ma ma ma ma v v v v pf a mj ms c/w *2n-series types in accordance with jeoec registration data format (js-6, rdf-1). 'pulsed; pulse duration < 350 ps, duty factor = 2%. bcaution: the sustaining voltages vceq(sus|, and vqer(sus). must not be measured on a curve tracer. icm for 40851
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